Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate Driver

S. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2017)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Simon Mönch University of Stuttgart

S. Schumann

S. Seemann

S. Wartzack

Boettinger S

Other publications of authors with the same name

Single-Input GaN Gate Driver based on Depletion-Mode Logic integrated with a 600 V GaN-on-Si Power TransistorS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2016)A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static LossesM. Basler, S. Mönch, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2019)Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate DriverS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2017)Quasi-normally-off GaN Gate Driver for High Slew-Rate D-Mode GaN-on-Si HEMTsS. Mönch, M. Costa, A. Barner, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, (May 2015)Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMTS. Mönch, M. Costa, A. Barner, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, (2015)Asymmetrical Substrate-Biasing Effects and 350 V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-BridgesS. Mönch, R. Reiner, P. Waltereit, D. Meder, M. Masler, R. Quay, O. Ambacher, I. Kallfass. in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2019)