%0 Journal Article %1 Moench_WiPDA2017 %A Mönch, S. %A Reiner, R. %A Weiss, B. %A Waltereit, P. %A Quay, R. %A Ambacher, O. %A Kallfass, I. %D 2017 %J in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications %K imported %P 1--6 %T Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate Driver

@article{Moench_WiPDA2017, added-at = {2020-09-07T14:26:58.000+0200}, author = {M{\"{o}}nch, S. and Reiner, R. and Weiss, B. and Waltereit, P. and Quay, R. and Ambacher, O. and Kallfass, I.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/22aaef782d939713b1b89272f0af59ae1/ingmarkallfass}, interhash = {6c4b75ff47a2f90f9586262f225b2e9b}, intrahash = {2aaef782d939713b1b89272f0af59ae1}, journal = {in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications}, keywords = {imported}, pages = {1--6}, timestamp = {2022-11-04T10:48:48.000+0100}, title = {{Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate Driver}}, year = 2017 }