%0 Journal Article %1 Moench_ISPSD2015 %A Mönch, S. %A Costa, M. %A Barner, A. %A Reiner, R. %A Weiss, B. %A Waltereit, P. %A Quay, R. %A Ambacher, O. %A Kallfass, I. %D 2015 %J in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong %K imported %P 1--4 %T Quasi-normally-off GaN Gate Driver for High Slew-Rate D-Mode GaN-on-Si HEMTs

@article{Moench_ISPSD2015, added-at = {2020-09-07T14:26:58.000+0200}, author = {M{\"{o}}nch, S. and Costa, M. and Barner, A. and Reiner, R. and Weiss, B. and Waltereit, P. and Quay, R. and Ambacher, O. and Kallfass, I.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28fa9e287bd46d7b18c8515b9711cf105/ingmarkallfass}, interhash = {0ed00d104b32ce0b3788cb97ee9ab5cb}, intrahash = {8fa9e287bd46d7b18c8515b9711cf105}, journal = {in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong}, keywords = {imported}, month = may, pages = {1--4}, timestamp = {2022-11-04T10:48:48.000+0100}, title = {{Quasi-normally-off GaN Gate Driver for High Slew-Rate D-Mode GaN-on-Si HEMTs}}, year = 2015 }