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Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations

S. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)

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apl. Prof. Dr. Reiner Vogg University of Stuttgart

Reiner Dietz University of Stuttgart

R. Koerner

R. Watty

Dr. Reiner Rössle University of Stuttgart

Other publications of authors with the same name

Quasi-normally-off GaN gate driver for high slew-rate D-Mode GaN-on-Si HEMTsS. Mönch, M. Costa, A. Barner, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, and O. Ambacher. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), page 373-376. Piscataway, NJ, IEEE, (2015)A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary DevicesS. Moench, R. Reiner, P. Waltereit, J. Hueckelheim, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMTS. Mönch, M. Costa, A. Barner, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, (2015)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power ICD. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Munoz-Baron, P. Waltereit, and I. Kallfass. in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate TerminationsS. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICsM. Basler, S. Moench, R. Reiner, F. Benkhelifa, G. Weidinger, G. Weis, R. Quay, I. Kallfass, and O. Ambacher. in Proc. PCIM Europe Conference, (2021)PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link CapacitorsS. Moench, R. Reiner, P. Waltereit, F. Benkhelifa, J. Hückelheim, D. Meder, M. Zink, T. Kaden, S. Noll, S. Mansfeld and 3 other author(s). IEEE Transactions on Power Electronics, 36 (1): 83-86 (2021)Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and ModulesS. Moench, R. Reiner, B. Weiss, P. Waltereit, R. Quay, T. Kaden, and I. Kallfass. in. Proc. PCIM Europe, Nuremberg, Germany, (2018)A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static LossesM. Basler, S. Mönch, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2019)Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate DriverS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2017)