Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Journal Article
%1 Moench_ISPSD2021
%A Moench, S.
%A Reiner, R.
%A Waltereit, P.
%A Ambacher, O.
%A Kallfass, I.
%D 2021
%J in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD)
%K PUMA in update
%T Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations
@article{Moench_ISPSD2021,
added-at = {2022-11-04T11:48:46.000+0100},
author = {Moench, S. and Reiner, R. and Waltereit, P. and Ambacher, O. and Kallfass, I.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/24ec600649d1333d0ee206905a777aba6/ingmarkallfass},
date-added = {2020-12-05 12:08:02 +0100},
date-modified = {2021-12-21 08:41:58 +0100},
interhash = {9e5b5c6ce659e497434138d7d4b2abe3},
intrahash = {4ec600649d1333d0ee206905a777aba6},
journal = {in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
keywords = {PUMA in update},
timestamp = {2022-11-04T10:48:46.000+0100},
title = {Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations},
year = 2021
}