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Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations

S. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)

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P. Hommel

P. Abegglen

P. Krasteva

P. E. Bl\"ochl

Philipp P. Hallmen

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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice BufferS. Moench, S. Muller, R. Reiner, P. Waltereit, H. Czap, M. Basler, J. Huckelheim, L. Kirste, I. Kallfass, R. Quay and 1 other author(s). Physica Status Solidi A: Applications and Materials Science, (September 2020)Integrated Current Sensing in GaN Power ICsS. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2019)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power ICD. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Baron, P. Waltereit, and I. Kallfass. PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, page 1-7. (July 2020)A GaN-on-Si Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode ControlM. Basler, S. Moench, R. Reiner, P. Waltereit, R. Quay, and I. Kallfass. in. Proc. PCIM Europe, Nuremberg, Germany, (May 2019)Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier with 0.2 V Turn-On VoltageM. Basler, S. Reiner, R Moench, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. IEEE Electron Device Letters, 41 (7): 993-996 (May 2020)A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and SensorsS. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2020)GaN Active Diode for Low-Loss RectificationM. Basler, R. Reiner, S. Moench, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)Single-Input GaN Gate Driver based on Depletion-Mode Logic integrated with a 600 V GaN-on-Si Power TransistorS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2016)Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate TerminationsS. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link CapacitorsS. Moench, R. Reiner, P. Waltereit, F. Benkhelifa, J. Hückelheim, D. Meder, M. Zink, T. Kaden, S. Noll, S. Mansfeld and 3 other author(s). IEEE Transactions on Power Electronics, 36 (1): 83-86 (2021)