%0 Journal Article %1 Diebold:01 %A Diebold, S. %A Kallfass, I. %A Massler, H. %A Leuther, A. %A Tessmann, A. %A Pahl, P. %A Koch, S. %A Siegel, M. %A Ambacher, O. %D 2010 %J in Proc. 5th European Microwave Integrated Circuit Conf., Paris %K imported %P 78--81 %T Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements

@article{Diebold:01, added-at = {2020-09-07T14:26:58.000+0200}, author = {Diebold, S. and Kallfass, I. and Massler, H. and Leuther, A. and Tessmann, A. and Pahl, P. and Koch, S. and Siegel, M. and Ambacher, O.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e291f8b40f4d760858d8a07e76b2ffbe/ingmarkallfass}, interhash = {83751a3006ddfb3a1ccee45a9d0ee068}, intrahash = {e291f8b40f4d760858d8a07e76b2ffbe}, journal = {in Proc. 5th European Microwave Integrated Circuit Conf., Paris}, keywords = {imported}, pages = {78--81}, timestamp = {2022-11-04T10:48:48.000+0100}, title = {{Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements}}, year = 2010 }