%0 Journal Article
%1 Diebold:01
%A Diebold, S.
%A Kallfass, I.
%A Massler, H.
%A Leuther, A.
%A Tessmann, A.
%A Pahl, P.
%A Koch, S.
%A Siegel, M.
%A Ambacher, O.
%D 2010
%J in Proc. 5th European Microwave Integrated Circuit Conf., Paris
%K imported
%P 78--81
%T Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements
@article{Diebold:01,
added-at = {2020-09-07T14:26:58.000+0200},
author = {Diebold, S. and Kallfass, I. and Massler, H. and Leuther, A. and Tessmann, A. and Pahl, P. and Koch, S. and Siegel, M. and Ambacher, O.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e291f8b40f4d760858d8a07e76b2ffbe/ingmarkallfass},
interhash = {83751a3006ddfb3a1ccee45a9d0ee068},
intrahash = {e291f8b40f4d760858d8a07e76b2ffbe},
journal = {in Proc. 5th European Microwave Integrated Circuit Conf., Paris},
keywords = {imported},
pages = {78--81},
timestamp = {2022-11-04T10:48:48.000+0100},
title = {{Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements}},
year = 2010
}