Sensitivity Analysis of 600 V Lateral GaN-on-Si HEMTs to Substrate Potential by 4-Terminal IV, CV, Qg Characterization for the Improvement of HEMT Models
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%0 Journal Article
%1 Moench_COMPEL2017
%A Moench, S.
%A Salcines, C.
%A Li, Y.
%A Kallfass, I.
%D 2017
%J in Proc. IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL)
%K imported
%P 1--4
%T Sensitivity Analysis of 600 V Lateral GaN-on-Si HEMTs to Substrate Potential by 4-Terminal IV, CV, Qg Characterization for the Improvement of HEMT Models
@article{Moench_COMPEL2017,
added-at = {2020-09-07T14:26:58.000+0200},
author = {Moench, S. and Salcines, C. and Li, Y. and Kallfass, I.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/26567c74be84ad205b9217c26ab0aabef/ingmarkallfass},
date-modified = {2019-12-27 11:23:19 +0100},
interhash = {a3ad63f649bf27fbaf5c2c7faec4e53e},
intrahash = {6567c74be84ad205b9217c26ab0aabef},
journal = {in Proc. IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL)},
keywords = {imported},
pages = {1--4},
timestamp = {2022-11-04T10:48:48.000+0100},
title = {{Sensitivity Analysis of 600 V Lateral GaN-on-Si HEMTs to Substrate Potential by 4-Terminal IV, CV, Qg Characterization for the Improvement of HEMT Models}},
year = 2017
}
