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Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

K. Sharma, K. Muñoz Barón, J. Hückelheim, D. Koch, and I. Kallfass. in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)

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Daniel Koch University of Stuttgart

D. Marino

Maurice Koch University of Stuttgart

Supplemental Material for "A Multimodal Framework for Understanding Collaborative Design Processes"M. Koch, N. Pathmanathan, D. Weiskopf, and K. Kurzhals. Software, (2025)

Dr. -Ing. Timo Koch University of Stuttgart

Timo Koch

Other publications of authors with the same name

Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power ICD. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Baron, P. Waltereit, and I. Kallfass. PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, page 1-7. (July 2020)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power ICD. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Munoz-Baron, and I. Waltereit, P.and Kallfass. in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power DevicesJ. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass. IEEE Open Journal of Power Electronics, (December 2021)Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical ParameterK. Sharma, K. Muñoz Barón, J. Ruthardt, J. Hueckelheim, D. Koch, F. Muenzenmayer, and I. Kallfass. in. Proc. ECCE Asia, (2021)Optimization of Self-Oscillating Power Converter Based on GaN-HEMTs for Contactless Energy TransferD. Koch, M. Ruess, D. Maier, and I. Kallfass. in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), (2021)Multi-MHz Auto-Resonant Power Oscillator in a 650 V GaN-on-SOI Technology for Compact Wireless Power Transfer SystemsM. Ruess, D. Koch, and I. Kallfass. in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), (2023)Nonlinear Output Capacitance of Bidirectional Gallium Nitride Power SwitchesM. Bosch, D. Koch, and I. Kallfass. in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, (March 2025)A Comprehensive Impact-Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETsR. Schnitzler, D. Koch, T. Fink, M. Weiser, and I. Kallfass. IEEE Trans. on Electron Devices, (2025)Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid ApplicationsD. Koch, and I. Kallfass. in Proc. Applied Power Electronics Conference (APEC), Phoenix, (March 2021)Comparison of Gate-Source-Dependent Soft- and Hard-Switching Losses of Wide-Bandgap Semiconductor Utilizing Electrical and Rapid Heatsinkless Calorimetric MeasurementsR. Schnitzler, D. Koch, M. Weiser, J. Weimer, and I. Kallfass. in Proc. Applied Power Electronics Conference (APEC), Long Beach, (February 2024)