PUMA

Akademisches Publikationsmanagement
Publikationen sammeln, verwalten und teilen.

( en | de )

 

Disambiguierung von "Muñoz Barón, K."

Autor der Publikation

KopierenLöschenDiese Publikation zur Ablage hinzufügen
Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

, , , , und . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)

Bitte wählen Sie eine Person um die Publikation zuzuordnen

Um zwischen Personen mit demselben Namen zu unterscheiden, wird der akademische Grad und der Titel einer wichtigen Publikation angezeigt. Zudem lassen sich über den Button neben dem Namen einige der Person bereits zugeordnete Publikationen anzeigen.

Kevin Muñoz Barón

Kevin Muñoz Barón

Kevin Muñoz Barón

Kevin Munoz Baron University of Stuttgart

Marvin Munoz Barón University of Stuttgart

 

Weitere Publikationen von Autoren mit dem selben Namen

Non-Destructive Failure Analysis of Power Devices via Time-Domain Reflectometry, , , und . in. Proc. CASE, Lille, France, (Mai 2021)Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter, , , , , , und . in. Proc. ECCE Asia, (2021)Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , , , und . in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK, (2020)Threshold voltage instability under application-oriented power cycling conditions for SiC power devices, , , , und . in. Proc. PCIM Europe, Nuremberg, Germany, (Mai 2020)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , und . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , , , und . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices, , , , , und . in. Proc. PCIM Europe digital days, Nuremberg, Germany, (Juli 2020)