Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Journal Article
%1 Sharma_PEMD2020
%A Sharma, K.
%A Muñoz Barón, K.
%A Ruthardt, J.
%A Hückelheim, J.
%A Koch, D.
%A Münzenmayer, F.
%A Kallfass, I.
%D 2020
%J in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK
%K imported
%T Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
@article{Sharma_PEMD2020,
added-at = {2020-09-07T14:26:58.000+0200},
author = {Sharma, K. and Mu{\~{n}}oz Bar{\'{o}}n, K. and Ruthardt, J. and H{\"{u}}ckelheim, J. and Koch, D. and M{\"{u}}nzenmayer, F. and Kallfass, I.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2d399e1208ae9a13f5e713cade1c6af41/ingmarkallfass},
interhash = {cee7624d9be6b174253faac3d583c4b7},
intrahash = {d399e1208ae9a13f5e713cade1c6af41},
journal = {in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK},
keywords = {imported},
timestamp = {2025-05-26T10:46:15.000+0200},
title = {{Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter}},
year = 2020
}