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Disambiguation of "Parries, Paul C."

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A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier.

, , , , , , , , , , , , , , , , and . ISSCC, page 486-617. IEEE, (2007)

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Theresa Paulus University of Stuttgart

PD Dr. Simon Paulus University of Stuttgart

Prof. Dr. Paul Keller University of Stuttgart

Paul Betz University of Stuttgart

C. Traut

 

Other publications of authors with the same name

45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications., , , , , , , , , and 10 other author(s). IBM Journal of Research and Development, 55 (3): 5 (2011)Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond., , , , , , , , , and 8 other author(s). ICICDT, page 1-4. IEEE, (2012)Embedded DRAM: Technology platform for the Blue Gene/L chip., , , , , , and . IBM Journal of Research and Development, 49 (2-3): 333-350 (2005)Performance-optimized gate-first 22-nm SOI technology with embedded DRAM., , , , , , , , , and 6 other author(s). IBM Journal of Research and Development, (2015)Analysis of Retention Time Distribution of Embedded DRAM - A New Method to Characterize Across-Chip Threshold Voltage Variation., , , and . ITC, page 1-7. IEEE Computer Society, (2008)A 1 MB Cache Subsystem Prototype With 1.8 ns Embedded DRAMs in 45 nm SOI CMOS., , , , , , , , , and 11 other author(s). IEEE J. Solid State Circuits, 44 (4): 1216-1226 (2009)Process technology for IBM 14-nm processor designs featuring silicon-on-insulator FinFETs., , , , , , , , , and . IBM Journal of Research and Development, 62 (2/3): 11 (2018)A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier., , , , , , , , , and 7 other author(s). IEEE J. Solid State Circuits, 43 (1): 86-95 (2008)A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier., , , , , , , , , and 7 other author(s). ISSCC, page 486-617. IEEE, (2007)