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Disambiguation of "Ambacher, Oliver"

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W-band radiometer system with switching front-end for multi-load calibration.

, , , , , , and . IGARSS, page 3843-3846. IEEE, (2011)

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Dr. -Ing. Oliver Kirschner University of Stuttgart

Systematic Comparison of Sensor Signals for Pump Operating Points Estimation Using Convolutional Neural Network, , and . International journal of turbomachinery propulsion and power, 8 (4): 39 (2023)

Univ. -Prof. Dr. -Ing. Oliver Sawodny University of Stuttgart

Metal hydride reactor for output temperature control, , , , , , , and . International journal of hydrogen energy, 50 (D): 1502-1517 (2024)

Oliver Sawodny

Oliver Bischoff University of Stuttgart

Oliver Scheel University of Stuttgart

 

Other publications of authors with the same name

Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications., , , , , , , , , and 3 other author(s). Future Security, volume 318 of Communications in Computer and Information Science, page 200-211. Springer, (2012)Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz., , , , , and . IEICE Transactions, 93-C (8): 1238-1244 (2010)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , and . Microelectronics Reliability, 54 (12): 2656-2661 (2014)A Dielectric-Filled Cavity-Backed Lens-Coupled Dipole Antenna at 100 GHz., , , , and . RWS, page 1-3. IEEE, (2019)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 2. IEEE, (2015)Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges, , , , , and . 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 335-338. Piscataway, IEEE, (2021)Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , and 6 other author(s). Microelectronics Reliability, 49 (5): 474-477 (2009)Determination of small-signal parameters of GaN-based HEMTs, , , , , , , , , and 4 other author(s). IEEE/Cornell Conference on High Performance Devices, page 115--122. Ithaca, NY, USA, (2000)Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates., , , , , and . IEEE Trans. Instrumentation and Measurement, 65 (11): 2551-2559 (2016)Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology, , , , , , , and . Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)