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Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.

, , , , , and . IEICE Transactions, 93-C (8): 1238-1244 (2010)

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Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems, , , , and . IEEE/MTT International Microwave Symposium (MTT), page 1--4. Baltimore, MD, USA, (2011)Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz., , , , , and . IEICE Transactions, 93-C (8): 1238-1244 (2010)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectronics Reliability, 55 (9-10): 1667-1671 (2015)A high gain SiGe-GaN switching power amplifier in the GHz-range, , , , and . IEEE Annual Wireless and Microwave Technology Conference (WAMICON), page 1--4. Cocoa Beach, FL, USA, (2012)A high-power dual-gate GaN switching-amplifier in the GHz-range, , , , and . IEEE Annual Wireless and Microwave Technology Conference (WAMICON), page 1--4. Clearwater Beach, FL, USA, (2011)