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Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology

R. Reiner, P. Waltereit, B. Weiss, S. Moench, M. Wespel, S. Mueller, R. Quay, and O. Ambacher. Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)
DOI: 10.1049/iet-pel.2017.0397

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Matthias Keinert

Concept of a Computerized Numerical Control Kernel for Execution on Multi-core ProcessorsM. Keinert, A. Lechler, and A. Verl. IEEE Advanced Motion Control, page 599-604. (April 2016)

Concept of a Computerized Numerical Control Kernel for Execution on Multi-core ProcessorsM. Keinert, A. Lechler, and A. Verl. IEEE Advanced Motion Control, page 599-604. (April 2016)OPC UA Informationsmodell für CNC-Datenschnittstellen : standardisierte Schnittstelle für CNC-WerkzeugmaschinenM. Keinert, and A. Lechler. Automation 2015, 2258, page 593-604. Düsseldorf, VDI-Verl., (2015)Aufwertung von HMI-Systemen durch Design, Austauschbarkeit und IntelligenzM. Keinert, and P. Pruschek. (2013)

Dr. -Ing. Matthias Hofmann University of Stuttgart

Sicherheits- und Bedienkonzept für kollaborierende MaterialflusssystemeM. Hofmann. Logistics Journal: Proceedings, 2020, (2020)

Sicherheits- und Bedienkonzept für kollaborierende MaterialflusssystemeM. Hofmann. Logistics Journal: Proceedings, 2020, (2020)Montage- und Logistik-FTF für die Automobilmontage der Zukunft.M. Hofmann, and K. Wehking. Hebezeuge Fördermittel 6/2016, Forschungskatalog Flurförderzeuge 2016, (2016)Montage- und Logistik-FTF für die Automobilproduktion ohne Takt und Band.M. Hofmann. Wehking, K.- H. (Hrsg.): Tagungsband zum 12. Fachkolloquium der Wissenschaftlichen Gesellschaft für Technische Logistik e. V. (WGTL), 2016, (2016)

Matthias Bachmann

Matthias Bachmann

Matthias Bachmann

Other publications of authors with the same name

Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technologyR. Reiner, P. Waltereit, B. Weiss, S. Moench, M. Wespel, S. Mueller, R. Quay, and O. Ambacher. Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.M. Wespel, M. Baeumler, V. Polyakov, M. Dammann, R. Reiner, P. Waltereit, R. Quay, M. Mikulla, and O. Ambacher. Microelectronics Reliability, 54 (12): 2656-2661 (2014)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.M. Wespel, M. Dammann, V. Polyakov, R. Reiner, P. Waltereit, B. Weiss, R. Quay, M. Mikulla, and O. Ambacher. IRPS, page 2. IEEE, (2015)Degradation of 0.25 μm GaN HEMTs under high temperature stress test.M. Dammann, M. Baeumler, P. Brückner, W. Bronner, S. Maroldt, H. Konstanzer, M. Wespel, R. Quay, M. Mikulla, A. Graff and 4 other author(s). Microelectronics Reliability, 55 (9-10): 1667-1671 (2015)