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Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology

, , , , , , , and . Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)
DOI: 10.1049/iet-pel.2017.0397

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Enhancement of the Broadband Efficiency of a Class-J Power Amplifier with Varactor-based Dynamic Load Modulation, , , and . IEEE microwave and wireless components letters, 27 (2): 180-182 (2017)Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology, , , , , , , and . Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)