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Reliability of 70 nm metamorphic HEMTs., , , , , , and . Microelectronics Reliability, 44 (6): 939-943 (2004)Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , and 6 other author(s). Microelectronics Reliability, 49 (5): 474-477 (2009)High-field step-stress and long term stability of PHEMTs with different gate and recess lengths., , , , and . Microelectronics Reliability, 42 (9-11): 1587-1592 (2002)Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs., , , , , , and . Microelectronics Reliability, 51 (2): 224-228 (2011)Reliability of Metamorphic HEMTs for Power Applications., , , and . Microelectronics Reliability, 42 (9-11): 1569-1573 (2002)Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , and . Microelectronics Reliability, (2018)Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy., , , and . Micromachines, 5 (3): 408-419 (2014)Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications., , , , , , , , and . Microelectronics Reliability, (2017)Qualification of 50 V GaN on SiC technology for RF power amplifiers., , , , and . Microelectronics Reliability, 53 (9-11): 1439-1443 (2013)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , and . Microelectronics Reliability, 54 (12): 2656-2661 (2014)