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Qualification of 50 V GaN on SiC technology for RF power amplifiers., , , , and . Microelectronics Reliability, 53 (9-11): 1439-1443 (2013)Operating limits for RF power amplifiers at high junction temperatures., , , , and . Microelectronics Reliability, 44 (6): 963-972 (2004)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectronics Reliability, 55 (9-10): 1667-1671 (2015)High-resolution in-situ of gold electromigration: test time reduction., , , , , , and . Microelectronics Reliability, 41 (9-10): 1439-1442 (2001)Moisture absorption and desorption in wafer level chip scale packages., , , , , and . Microelectronics Reliability, 55 (9-10): 1872-1876 (2015)Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , and 6 other author(s). Microelectronics Reliability, 49 (5): 474-477 (2009)Effect of oval defects in GaAs on the reliability of SiNx metal-insulator-metal capacitors., , , , and . Microelectronics Reliability, 47 (8): 1188-1193 (2007)Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications., , , , , , , , and . Microelectronics Reliability, 46 (8): 1279-1284 (2006)