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Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies., , , , , , , , , and 5 other author(s). ISSCC, page 528-529. IEEE, (2008)Silicon LEDs in FinFET technology., , , , , and . ESSDERC, page 274-277. IEEE, (2014)The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices., , , , , , , , , and 2 other author(s). IRPS, page 5. IEEE, (2015)ESD characterization of planar InGaAs devices., , , , , , , , , and 7 other author(s). IRPS, page 3. IEEE, (2015)High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs., , , , , , , , and . Microelectron. Reliab., 52 (1): 118-123 (2012)Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation., , , , , and . Microelectronics Reliability, 54 (11): 2349-2354 (2014)Circuit Design for Bias Compatibility in Novel FinFET-Based Floating-Body RAM., , , , , , , , , and . IEEE Trans. on Circuits and Systems, 57-II (3): 183-187 (2010)Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors., , , , , , and . ESSDERC, page 412-415. IEEE, (2016)Micro-sized syringes for single-cell fluidic access integrated on a micro-electrode array CMOS chip., , , , , , , , , and . EMBC, page 7650-7653. IEEE, (2011)Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling., , , , , , , , , and 15 other author(s). ICICDT, page 145-148. IEEE, (2018)