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A 42 mW 200 fs-Jitter 60 GHz Sub-Sampling PLL in 40 nm CMOS., , , , , and . J. Solid-State Circuits, 50 (9): 2025-2036 (2015)A low-power radio chipset in 40nm LP CMOS with beamforming for 60GHz high-data-rate wireless communication., , , , , , , , , and 4 other author(s). ISSCC, page 236-237. IEEE, (2013)The Potential of FinFETs for Analog and RF Circuit Applications., , , , , , , , , and 5 other author(s). IEEE Trans. on Circuits and Systems, 54-I (11): 2541-2551 (2007)Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET., , , , , , and . ISCAS, page 2701-2704. IEEE, (2008)FinFET technology for analog and RF circuits., , , , , , , and . ICECS, page 182-185. IEEE, (2007)Modeling FinFET metal gate stack resistance for 14nm node and beyond., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs., , , , and . CICC, page 503-506. IEEE, (2007)Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations., , , , , and . IEEE Trans. VLSI Syst., 27 (3): 601-610 (2019)Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies., , , , , , , , , and 5 other author(s). ISSCC, page 528-529. IEEE, (2008)Design Technology co-optimization for N10., , , , , , , , , and 18 other author(s). CICC, page 1-8. IEEE, (2014)