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Compositional dependence of the band-gap of Ge1-x-ySixSny alloys, , , , , , , , , and 1 other author(s). Applied physics letters, 108 (24): 242104 (2016)Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, , , , , , , , , and 5 other author(s). Physical Review Materials, 4 (2): 024601 (2020)Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications, , , and . Semiconductor science and technology, 33 (11): 114001 (2018)Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Opt. Lett., 40 (13): 3209--3212 (July 2015)Growth and characterization of SiGeSn quantum well photodiodes, , , , , , , , , and 1 other author(s). Optics express, 23 (19): 25048-25057 (2015)Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges, , , , , , , , , and 2 other author(s). 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)