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Disambiguation of "Kostecki, Konrad"

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Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

, , , , , , , , , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)
DOI: 10.23919/MIPRO.2017.7973391

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Gernot Konrad University of Stuttgart

Konrad Langenbeck

Univ. -Prof. a. D. Dr. -Ing. Konrad Langenbeck University of Stuttgart

Matthias Konrad University of Stuttgart

Thomas Konrad University of Stuttgart

 

Other publications of authors with the same name

Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Electrically pumped lasing from Ge Fabry-Perot resonators on Si, , , , , , , , and . Optics express, 23 (11): 14815-14822 (2015)GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, , , , , , , , , and 2 other author(s). Opt. Express, 22 (1): 839--846 (January 2014)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, , , , , , , , , and 2 other author(s). Optics Express, 22 (1): 839-846 (2014)Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers, , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, 242, page 361-367. Pfaffikon, Trans Tech Publications, (2016)Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers, , , , , , and . Silicon photonics X, 9367, Bellingham, Wash., SPIE, (2015)Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn, , , , , and . Thin Solid Films, (2014)Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors, , , , , , , , , and 2 other author(s). Plasmonics in Biology and Medicine XIII, 9724, page 97240M. SPIE, (2016)Extraction of GeSn absorption coefficients from photodetector response, , , , , , , , and . 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), page 137-138. IEEE, (2014)