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Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

, , , , , , , , , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)
DOI: 10.23919/MIPRO.2017.7973391

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Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges, , , , , , , , , and 2 other author(s). 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)