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Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

, , , , , , , , , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)
DOI: 10.23919/MIPRO.2017.7973391

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Ge and GeSn Light Emitters on Si, , , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, volume 242 of Solid State Phenomena, page 353-360. Trans Tech Publications, (2016)Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Engineering of Germanium Tunnel Junctions for Optical Applications, , , , , and . IEEE Photonics Journal, (2018)Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Opt. Lett., 40 (13): 3209--3212 (July 2015)Electrically pumped lasing from Ge Fabry-Perot resonators on Si, , , , , , , , and . Opt. Express, 23 (11): 14815--14822 (June 2015)Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges, , , , , , , , , and 2 other author(s). 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 57-65. IEEE, (2017)Luminescence of strained Ge on GeSn virtual substrate grown on Si (001), , , , , and . Silicon Photonics XII, 10108, page 101080D. SPIE, (2017)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)