%0 Conference Paper %1 rolseth2017device %A Rolseth, Erlend G. %A Blech, Andreas %A Fischer, Inga A. %A Hashad, Youssef %A Koerner, Roman %A Kostecki, Konrad %A Kruglov, Aleksei %A Srinivasan, V. S. Senthil %A Weiser, Mathias %A Wendav, Torsten %A Busch, Kurt %A Schulze, Jörg %B 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) %D 2017 %I IEEE %K %P 57-65 %R 10.23919/MIPRO.2017.7973391 %T Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges %X In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing tunneling probabilities. Further it is found that when limited to a 10 nm δ-layer, Ge0.96 Sn0.04 is most beneficial for ION when positioned inside the channel as opposed to in the source, with a maximum of ION = 180 μA/μm at VDS= -2 V and VG = -4 V. Enhanced leakage currents (IOFF), which also degrades the subthreshold swing (SS), is a consequence of a smaller band gap and enhanced defect densities, and represent key challenges with implementing GeSn. %@ 978-953-233-090-8 and 978-953-233-092-2 and 978-1-5090-4969-1

@inproceedings{rolseth2017device, abstract = {In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing tunneling probabilities. Further it is found that when limited to a 10 nm δ-layer, Ge0.96 Sn0.04 is most beneficial for ION when positioned inside the channel as opposed to in the source, with a maximum of ION = 180 μA/μm at VDS= -2 V and VG = -4 V. Enhanced leakage currents (IOFF), which also degrades the subthreshold swing (SS), is a consequence of a smaller band gap and enhanced defect densities, and represent key challenges with implementing GeSn.}, added-at = {2023-08-31T16:48:10.000+0200}, author = {Rolseth, Erlend G. and Blech, Andreas and Fischer, Inga A. and Hashad, Youssef and Koerner, Roman and Kostecki, Konrad and Kruglov, Aleksei and Srinivasan, V. S. Senthil and Weiser, Mathias and Wendav, Torsten and Busch, Kurt and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28e1f0f0feba8221d47549117eb51d7a8/puma-wartung}, booktitle = {2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)}, doi = {10.23919/MIPRO.2017.7973391}, eventdate = {2017-05-22/2017-05-26}, eventtitle = {40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2017)}, interhash = {5b9270828b17ce1bfbb7ef8338352dd0}, intrahash = {8e1f0f0feba8221d47549117eb51d7a8}, isbn = {{978-953-233-090-8} and {978-953-233-092-2} and {978-1-5090-4969-1}}, keywords = {}, language = {eng}, pages = {57-65}, publisher = {IEEE}, timestamp = {2023-08-31T14:48:10.000+0200}, title = {Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges}, venue = {Opatija, Croatia}, year = 2017 }