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High frequency behaviour of Ge pin junctions, , , , and . International Workshop on New Group IV Semiconductor Nanoelectronics, Digest of papers, page 1--3. Sendai, Japan, (2010)Fast Ge p-i-n Photodetectors on Si, , , , and . International SiGe Technology and Device Meeting, page 1--2. Princeton, NJ, USA, (2006)Special Etch Technologies for Ge/Si Devices, , , , , , and . (2003)Monolithic SiGe Photodiode Technology, , , , and . Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), page 78--83. Stuttgart, Germany, (2002)A Compact Single-Board Solution for Commercializing Cost-Effective 77 GHz Automotive Front Radar, , , and . 2020 IEEE Asia-Pacific Microwave Conference (APMC), page 1098-1100. Piscataway, IEEE, (2020)Two-dimensional hole gases in SiGeSn alloys, , , , , , and . Semiconductor science and technology, 37 (5): 055009 (2022)Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors, , , , , and . Integrated Photonics : Materials, Devices, and Applications II, 8767, page 87670D. SPIE, (2013)Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures, , , , , , , and . Integrated Photonics : Materials, Devices, and Applications II, 8767, page 87670C. SPIE, (2013)Electrically pumped lasing from Ge Fabry-Perot resonators on Si, , , , , , , , and . Optics express, 23 (11): 14815-14822 (2015)Photocurrent Analysis of a Fast Ge p-i-n Detector on Si, , , , and . Applied Physics Letters, 91 (5): 051108 (2007)