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Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, , , , , , , , , and 5 other author(s). Physical Review Materials, 4 (2): 024601 (2020)Raman shifts in MBE-grown SixGe1 − x − ySny alloys with large Si content, , , , , , , , , and 3 other author(s). Journal of Raman spectroscopy, 52 (6): 1167-1175 (2021)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well, , , , , , , and . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 7-12. Piscataway, NJ, IEEE, (2019)Electrical characterization of n-doped SiGeSn diodes with high Sn content, , , , , , , , and . Semiconductor Science and Technology, 33 (12): 124017 (2018)SiGeSn material for integrated optical devices, , , , and . Silicon Photonics : From Fundamental Research to Manufacturing, 10686, SPIE, (2018)Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si, , , , , , and . Microelectronics journal, 123 (May): 105404 (2022)