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Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors, , , , , , , and . Solid-State Electronics, (August 2015)Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics, , , , , , , , and . 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 45-49. (September 2021)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn, , , , , , , , , and . Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications, , , and . Semiconductor science and technology, 33 (11): 114001 (2018)Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, , , , , , , , , and 5 other author(s). Physical Review Materials, 4 (2): 024601 (2020)Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing, , , , , and . 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0023-0026. IEEE, (2018)Silicon tunneling field-effect transistors with tunneling in line with the gate field, , , , , , , and . IEEE Electron Device Letters, 34 (2): 154-156 (2013)Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers, , , , , , , and . Journal of magnetism and magnetic materials, (2022)