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Disambiguation of "Ambacher, O."

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Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz

, , , , , , , , , , , and . Solid-State Circuits, IEEE Journal of, 46 (10): 2193--2202 (2011)
DOI: 10.1109/JSSC.2011.2163212

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Maximilian Overbeck

European debates during the Libya crisis of 2011: shared identity, divergent action. European Security, 23 (4): 583-600 (2014)

Nils Opgenorth University of Stuttgart

Towards data-informed co-design in digital fabrication, , , , , , and . Automation in Construction, 158 (November 2023): 105229 (February 2024)

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Marius Oei University of Stuttgart

Hamza Oukili University of Stuttgart

 

Other publications of authors with the same name

Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT, , , , , , , , and . 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page 92-97. Piscataway, NJ, IEEE, (2015)Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations, , , , and . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs, , , , , , , , and . in Proc. PCIM Europe Conference, (2021)Wireless Sub-THz Communication System with High Data Rate Enabled by RF Photonics and Active MMIC Technology, , , , , , , , , and 6 other author(s). in Proc. IEEE Photonics Conference, La Jolla, (2014)Design and model studies for solid-state power amplification at 210 GHz, , , , , , , , and . Int. Journal of Microwave and Wireless Technologies, 3 (Special Issue 03): 339--346 (2011)Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements, , , , , , , , and . in Proc. 5th European Microwave Integrated Circuit Conf., Paris, (2010)A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses, , , , , , and . in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2019)Metamorphic HEMT Technology for Low-noise Applications, , , , , , , , , and 1 other author(s). in Proc. 20th Int. Conf. on Indium Phosphide and Related Materials, (2009)Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate Driver, , , , , , and . in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2017)Broadband MMIC Tuners Dedicated to Noise Parameter Measurements at Cryogenic Temperatures, , , , , and . in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, (2012)