Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies., , , , , and . Microelectronics Reliability, 52 (11): 2521-2526 (2012)Total ionizing dose effects in shallow trench isolation oxides., , , , , , and . Microelectronics Reliability, 48 (7): 1000-1007 (2008)Single event transient effects in a voltage reference., , , , , , and . Microelectronics Reliability, 45 (2): 355-359 (2005)Single event burnout in power diodes: Mechanisms and models., , , and . Microelectronics Reliability, 46 (2-4): 317-325 (2006)Total-ionizing-dose effects and reliability of carbon nanotube FET devices., , , , , , and . Microelectronics Reliability, 54 (11): 2355-2359 (2014)1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions., , , , , , , , , and . Microelectronics Reliability, 51 (2): 212-216 (2011)Effects of device aging on microelectronics radiation response and reliability., , , , , , , and . Microelectronics Reliability, 47 (7): 1075-1085 (2007)A TCAD evaluation of a single Bulk-BICS with integrative memory cell., , , and . Microelectronics Journal, (2018)An efficient technique to select logic nodes for single event transient pulse-width reduction., , , , , , and . Microelectronics Reliability, 53 (1): 114-117 (2013)Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs., , , and . Microelectronics Reliability, 54 (3): 570-574 (2014)