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%0 Journal Article
%1 journals/mr/RezzakMSAFL12
%A Rezzak, Nadia
%A Maillard, Pierre
%A Schrimpf, Ronald D.
%A Alles, Michael L.
%A Fleetwood, Daniel M.
%A Li, Yanfeng Albert
%D 2012
%J Microelectronics Reliability
%K dblp
%N 11
%P 2521-2526
%T The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.
%U http://dblp.uni-trier.de/db/journals/mr/mr52.html#RezzakMSAFL12
%V 52
@article{journals/mr/RezzakMSAFL12,
added-at = {2012-10-17T00:00:00.000+0200},
author = {Rezzak, Nadia and Maillard, Pierre and Schrimpf, Ronald D. and Alles, Michael L. and Fleetwood, Daniel M. and Li, Yanfeng Albert},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2d8069c36f84166a332de5b39ab72632d/dblp},
ee = {http://dx.doi.org/10.1016/j.microrel.2012.05.013},
interhash = {de5f44fea5259e7115a12f2cb1372a48},
intrahash = {d8069c36f84166a332de5b39ab72632d},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = 11,
pages = {2521-2526},
timestamp = {2016-02-02T02:01:22.000+0100},
title = {The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr52.html#RezzakMSAFL12},
volume = 52,
year = 2012
}