%0 Journal Article %1 journals/mr/RezzakMSAFL12 %A Rezzak, Nadia %A Maillard, Pierre %A Schrimpf, Ronald D. %A Alles, Michael L. %A Fleetwood, Daniel M. %A Li, Yanfeng Albert %D 2012 %J Microelectronics Reliability %K dblp %N 11 %P 2521-2526 %T The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. %U http://dblp.uni-trier.de/db/journals/mr/mr52.html#RezzakMSAFL12 %V 52

@article{journals/mr/RezzakMSAFL12, added-at = {2012-10-17T00:00:00.000+0200}, author = {Rezzak, Nadia and Maillard, Pierre and Schrimpf, Ronald D. and Alles, Michael L. and Fleetwood, Daniel M. and Li, Yanfeng Albert}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2d8069c36f84166a332de5b39ab72632d/dblp}, ee = {http://dx.doi.org/10.1016/j.microrel.2012.05.013}, interhash = {de5f44fea5259e7115a12f2cb1372a48}, intrahash = {d8069c36f84166a332de5b39ab72632d}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = 11, pages = {2521-2526}, timestamp = {2016-02-02T02:01:22.000+0100}, title = {The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr52.html#RezzakMSAFL12}, volume = 52, year = 2012 }