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A 4 b 8 GSample/s A/D converter in SiGe bipolar technology

P. Xiao, K. Jenkins, M. Soyuer, H. Ainspan, J. Burghartz, H. Shin, M. Dolan, and D. Harame. 1997 IEEE International Solids-State Circuits Conference : Digest of Technical Papers, page 124-125. Piscataway, New Jersey, IEEE, (1997)
DOI: 10.1109/ISSCC.1997.585294

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A. Laukemann

Allison Keith University of Stuttgart

Christopher Jenkins University of Stuttgart

A. Laukemann

A. Laukemann

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On-chip circuit to monitor long-term NBTI and PBTI degradation.K. Jenkins, and P. Lu. Microelectronics Reliability, 53 (9-11): 1252-1256 (2013)Application of an SOI 0.12-µm CMOS technology to SoCs with low-power and high-frequency circuits.J. Plouchart, N. Zamdmer, J. Kim, M. Sherony, Y. Tan, A. Ray, M. Talbi, L. Wagner, K. Wu, N. Lustig and 11 other author(s). IBM Journal of Research and Development, 47 (5-6): 611-630 (2003)A simple array-based test structure for the AC variability characterization of MOSFETs.K. Balakrishnan, K. Jenkins, and D. Boning. ISQED, page 539-544. IEEE, (2011)Statistical Characterization and On-Chip Measurement Methods for Local Random Variability of a Process Using Sense-Amplifier-Based Test Structure.S. Mukhopadhyay, K. Kim, K. Jenkins, C. Chuang, and K. Roy. ISSCC, page 400-611. IEEE, (2007)On-Chip Circuit for Measuring Period Jitter and Skew of Clock Distribution Networks.K. Jenkins, K. Shepard, and Z. Xu. CICC, page 157-160. IEEE, (2007)Detecting and Preventing Measurement Errors.K. Jenkins. IEEE Design & Test of Computers, 14 (4): 78-86 (1997)A statistical critical path monitor in 14nm CMOS.B. Fleischer, C. Vezyrtzis, K. Balakrishnan, and K. Jenkins. ICCD, page 507-511. IEEE Computer Society, (2016)SiGe power HBT's for low-voltage, high-performance RF applicationsJ. Burghartz, J. Plouchart, K. Jenkins, C. Webster, and M. Soyuer. IEEE Electron Device Letters, 19 (4): 103-105 (April 1998)Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substratesJ. Burghartz, D. Edelstein, K. Jenkins, and Y. Kwark. IEEE Transactions on Microwave Theory and Techniques, 45 (10): 1961-1968 (October 1997)Device design issues for a high-performance technology with Si or SiGe epitaxial baseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)