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%0 Journal Article
%1 burghartz1998power
%A Burghartz, Joachim N.
%A Plouchart, Jean-Olivier
%A Jenkins, Keith A.
%A Webster, Charles S.
%A Soyuer, Mehmet
%C Piscataway, New Jersey
%D 1998
%I IEEE
%J IEEE Electron Device Letters
%K INES
%N 4
%P 103-105
%R 10.1109/55.663528
%T SiGe power HBT's for low-voltage, high-performance RF applications
%V 19
@article{burghartz1998power,
added-at = {2019-04-09T11:35:12.000+0200},
address = {Piscataway, New Jersey},
author = {Burghartz, Joachim N. and Plouchart, Jean-Olivier and Jenkins, Keith A. and Webster, Charles S. and Soyuer, Mehmet},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/215666d3b49e9b261edef1532e32b7feb/kevin.konnerth},
doi = {10.1109/55.663528},
interhash = {6d6b08e2648dc0cc3006f663cf620a59},
intrahash = {15666d3b49e9b261edef1532e32b7feb},
issn = {{0741-3106} and {1558-0563}},
journal = {IEEE Electron Device Letters},
keywords = {INES},
month = apr,
number = 4,
pages = {103-105},
publisher = {IEEE},
timestamp = {2019-04-09T09:35:12.000+0200},
title = {SiGe power HBT's for low-voltage, high-performance RF applications},
volume = 19,
year = 1998
}