%0 Journal Article %1 burghartz1998power %A Burghartz, Joachim N. %A Plouchart, Jean-Olivier %A Jenkins, Keith A. %A Webster, Charles S. %A Soyuer, Mehmet %C Piscataway, New Jersey %D 1998 %I IEEE %J IEEE Electron Device Letters %K INES %N 4 %P 103-105 %R 10.1109/55.663528 %T SiGe power HBT's for low-voltage, high-performance RF applications %V 19

@article{burghartz1998power, added-at = {2019-04-09T11:35:12.000+0200}, address = {Piscataway, New Jersey}, author = {Burghartz, Joachim N. and Plouchart, Jean-Olivier and Jenkins, Keith A. and Webster, Charles S. and Soyuer, Mehmet}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/215666d3b49e9b261edef1532e32b7feb/kevin.konnerth}, doi = {10.1109/55.663528}, interhash = {6d6b08e2648dc0cc3006f663cf620a59}, intrahash = {15666d3b49e9b261edef1532e32b7feb}, issn = {{0741-3106} and {1558-0563}}, journal = {IEEE Electron Device Letters}, keywords = {INES}, month = apr, number = 4, pages = {103-105}, publisher = {IEEE}, timestamp = {2019-04-09T09:35:12.000+0200}, title = {SiGe power HBT's for low-voltage, high-performance RF applications}, volume = 19, year = 1998 }