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A new approach to the modeling of oxide breakdown on CMOS circuits., , , and . Microelectronics Reliability, 44 (9-11): 1519-1522 (2004)FinFET and MOSFET preliminary comparison of gate oxide reliability., , , , , and . Microelectronics Reliability, 46 (9-11): 1608-1611 (2006)Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses., , , , and . Microelectronics Reliability, 49 (9-11): 1024-1028 (2009)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectronics Reliability, 49 (9-11): 1188-1191 (2009)A New Time Efficient Methodology for the Massive Characterization of RTN in CMOS Devices., , , , , , , , and . IRPS, page 1-5. IEEE, (2019)Characterising the surface roughness of AFM grown SiO2 on Si., , , , and . Microelectronics Reliability, 41 (7): 1077-1079 (2001)Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures., , and . Microelectronics Reliability, 42 (9-11): 1513-1516 (2002)Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors., , , , , and . Microelectronics Reliability, 48 (8-9): 1521-1524 (2008)Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM., , , and . Microelectronics Reliability, 43 (8): 1203-1209 (2003)Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs., , , , , , , and . Microelectronics Reliability, 47 (9-11): 1349-1352 (2007)