%0 Journal Article %1 journals/mr/PortiMNA03 %A Porti, Marc %A Meli, S. %A Nafría, Montserrat %A Aymerich, Xavier %D 2003 %J Microelectronics Reliability %K dblp %N 8 %P 1203-1209 %T Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. %U http://dblp.uni-trier.de/db/journals/mr/mr43.html#PortiMNA03 %V 43

@article{journals/mr/PortiMNA03, added-at = {2015-02-05T00:00:00.000+0100}, author = {Porti, Marc and Meli, S. and Nafría, Montserrat and Aymerich, Xavier}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/22a417ec914ea051b023f9595e5bb2ec6/dblp}, ee = {http://dx.doi.org/10.1016/S0026-2714(03)00173-2}, interhash = {dc1221ff3ff9fae01721f422850b4cdd}, intrahash = {2a417ec914ea051b023f9595e5bb2ec6}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = 8, pages = {1203-1209}, timestamp = {2016-02-02T02:01:35.000+0100}, title = {Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr43.html#PortiMNA03}, volume = 43, year = 2003 }