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PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors

, , , , , , , , , , , , and . IEEE Transactions on Power Electronics Letters, (2020)

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Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology, , , , , , , and . Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges, , , , , , and . 2018 IEEE 6th Workshop On Wide Bandgap Power Devices and Applications (WiPDA), page 242-246. IEEE, (2018)A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts, , , , , , and . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 274-277. Piscataway, IEEE, (2020)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , and . Microelectronics Reliability, 54 (12): 2656-2661 (2014)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 2. IEEE, (2015)Arguments against the possibility of perfect rationality.. Minds and Machines, 5 (3): 373-389 (1995)Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges, , , , , and . 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 335-338. Piscataway, IEEE, (2021)Explanatory warrant for scientific realism., and . Synthese, 161 (2): 271-282 (2008)Building Blocks for GaN Power Integration., , , , , , , and . IEEE Access, (2021)Integrated Current Sensing in GaN Power ICs, , , , , and . 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 111-114. Piscataway, NJ, IEEE, (2019)