Author of the publication

Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges

, , , , , , and . 2018 IEEE 6th Workshop On Wide Bandgap Power Devices and Applications (WiPDA), page 242-246. IEEE, (2018)
DOI: 10.1109/WiPDA.2018.8569066

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology, , , , , , , and . Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges, , , , , , and . 2018 IEEE 6th Workshop On Wide Bandgap Power Devices and Applications (WiPDA), page 242-246. IEEE, (2018)