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A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts

M. Basler, S. Mönch, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 274-277. Piscataway, IEEE, (2020)
DOI: 10.1109/ISPSD46842.2020.9170047

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Simon Mönch University of Stuttgart

Stefan Kunert University of Stuttgart

Stefan Schippling University of Stuttgart

Stefan Hecht University of Stuttgart

Stefan Köbel University of Stuttgart

Other publications of authors with the same name

Sensitivity Analysis of Behavioral MOSFET Models in Transient EMC SimulationP. Hillenbrand, M. Beltle, S. Tenbohlen, and S. Mönch. (2017)Integrated Current Sensing in GaN Power ICsS. Mönch, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 111-114. Piscataway, NJ, IEEE, (2019)Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-BridgesS. Mönch, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 335-338. Piscataway, IEEE, (2021)Switching characteristics of integrated GaN-on-Si half-bridge and driver circuitsS. Mönch. Universität Stuttgart, Stuttgart, Dissertation, (2021)A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and SensorsS. Mönch, R. Reiner, P. Waltereit, S. Müller, R. Quay, O. Ambacher, and I. Kallfass. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 254-257. Piscataway, IEEE, (2020)A GaN-Based Active Diode Circuit for Low-Loss RectificationM. Basler, R. Reiner, S. Mönch, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 59-62. Piscataway, IEEE, (2021)Quasi-normally-off GaN gate driver for high slew-rate D-Mode GaN-on-Si HEMTsS. Mönch, M. Costa, A. Barner, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, and O. Ambacher. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), page 373-376. Piscataway, NJ, IEEE, (2015)Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-BridgesS. Mönch, B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2018 IEEE 6th Workshop On Wide Bandgap Power Devices and Applications (WiPDA), page 242-246. IEEE, (2018)A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current ShuntsM. Basler, S. Mönch, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 274-277. Piscataway, IEEE, (2020)Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMTS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, M. Costa, A. Barner, O. Ambacher, and I. Kallfass. 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page 92-97. Piscataway, NJ, IEEE, (2015)