Author of the publication

A GaN-Based Active Diode Circuit for Low-Loss Rectification

, , , , , , and . 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 59-62. Piscataway, IEEE, (2021)
DOI: 10.23919/ISPSD50666.2021.9452218

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors, , , , , , , , , and 3 other author(s). IEEE Transactions on Power Electronics Letters, (2020)Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer, , , , , , , , , and 1 other author(s). Physica Status Solidi. A, Applications and Materials Science, 218 (3): 2000404 (2021)A GaN-Based Active Diode Circuit for Low-Loss Rectification, , , , , , and . 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 59-62. Piscataway, IEEE, (2021)A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors, , , , , , and . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 254-257. Piscataway, IEEE, (2020)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , and . Microelectronics Reliability, 54 (12): 2656-2661 (2014)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 2. IEEE, (2015)Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges, , , , , and . 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 335-338. Piscataway, IEEE, (2021)Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs., , , , , , and . Microelectronics Reliability, 51 (2): 224-228 (2011)Building Blocks for GaN Power Integration., , , , , , , and . IEEE Access, (2021)Integrated Current Sensing in GaN Power ICs, , , , , and . 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 111-114. Piscataway, NJ, IEEE, (2019)