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A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors

, , , , , , and . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 254-257. Piscataway, IEEE, (2020)
DOI: 10.1109/ISPSD46842.2020.9170089

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