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A GaN-Based Active Diode Circuit for Low-Loss Rectification

M. Basler, R. Reiner, S. Mönch, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 59-62. Piscataway, IEEE, (2021)
DOI: 10.23919/ISPSD50666.2021.9452218

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Univ. -Prof. Dr. -Ing. Ingmar Kallfass University of Stuttgart

Ingmar Stoehr

Ingmar Stöhr

Univ. -Prof. Dr. Remco Ingmar Leine University of Stuttgart

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Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications.M. Schlechtweg, A. Tessmann, A. Hülsmann, I. Kallfass, A. Leuther, R. Aidam, C. Zech, U. Lewark, H. Massler, M. Riessle and 3 other author(s). Future Security, volume 318 of Communications in Computer and Information Science, page 200-211. Springer, (2012)Performance comparison of raised cosine shaped and rectangular pulsed signals in E-band wireless communication systems.F. Boes, J. Antes, D. Meier, T. Messinger, D. Muller, R. Henneberger, A. Tessmann, and I. Kallfass. RWS, page 186-189. IEEE, (2015)Multi-gigabit data transmission using MMIC-based E-band frontends.J. Antes, F. Boes, D. Meier, U. Lewark, A. Tessmann, A. Leuther, R. Henneberger, and I. Kallfass. RWS, page 10-12. IEEE, (2014)A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTsM. Weiser, J. Hückelheim, and I. Kallfass. IEEE Transactions on Electron Devices, 68 (9): 4302-4309 (September 2021)A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT TechnologyJ. Woermann, A. Dyskin, S. Chartier, and I. Kallfass. 2021 16th European Microwave Integrated Circuits Conference (EuMIC), IEEE, (April 2022)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical ParameterK. Sharma, K. Muñoz Barón, J. Ruthardt, J. Hueckelheim, D. Koch, F. Muenzenmayer, and I. Kallfass. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, page 1-6. Berlin, Germany, (March 2020)Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 kHz Buck Converter High Current ApplicationsD. Koch, A. Sharma, T. Huesgen, and I. Kallfass. 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), page 204-208. (November 2022)An Active Multiplier-by-Six S-MMIC for 500 GHzC. Grötsch, H. Massler, A. Leuther, and I. Kallfass. 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Piscataway, NJ, IEEE, (2018)An Active Gate-Pumped Transconductance Upconverter for Terahertz FrequenciesC. Grötsch, S. Wagner, and I. Kallfass. Ü drive microwaves", page 236-239. Piscataway, NJ, IEEE, (2019)Instrumentation for the Time and Frequency Domain Characterization of Terahertz Communication Transceivers and their Building BlocksI. Kallfass, D. Wrana, B. Schoch, J. Hesler, M. Kohler, J. Teyssier, and J. Dunsmore. 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, page 1030-1033. (June 2023)