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A GaN-Based Active Diode Circuit for Low-Loss Rectification

M. Basler, R. Reiner, S. Mönch, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 59-62. Piscataway, IEEE, (2021)
DOI: 10.23919/ISPSD50666.2021.9452218

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Univ. -Prof. Dr. -Ing. Ingmar Kallfass University of Stuttgart

Ingmar Stoehr

Ingmar Stöhr

Univ. -Prof. Dr. Remco Ingmar Leine University of Stuttgart

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Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications.M. Schlechtweg, A. Tessmann, A. Hülsmann, I. Kallfass, A. Leuther, R. Aidam, C. Zech, U. Lewark, H. Massler, M. Riessle and 3 other author(s). Future Security, volume 318 of Communications in Computer and Information Science, page 200-211. Springer, (2012)Performance comparison of raised cosine shaped and rectangular pulsed signals in E-band wireless communication systems.F. Boes, J. Antes, D. Meier, T. Messinger, D. Muller, R. Henneberger, A. Tessmann, and I. Kallfass. RWS, page 186-189. IEEE, (2015)Multi-gigabit data transmission using MMIC-based E-band frontends.J. Antes, F. Boes, D. Meier, U. Lewark, A. Tessmann, A. Leuther, R. Henneberger, and I. Kallfass. RWS, page 10-12. IEEE, (2014)A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT TechnologyJ. Woermann, A. Dyskin, S. Chartier, and I. Kallfass. 2021 16th European Microwave Integrated Circuits Conference (EuMIC), IEEE, (April 2022)Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric MeasurementsJ. Weimer, and I. Kallfass. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 455-458. Piscataway, NJ, IEEE, (2019)Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power TransistorsJ. Weimer, D. Koch, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature EstimationK. Muñoz Barón, K. Sharma, M. Nitzsche, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-BandA. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass. 2020 15th European Microwave Integrated Circuits Conference (EuMIC), page 245-248. Piscataway, IEEE, (2021)A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systemsI. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. Braun, and I. Kallfass. International Journal of Microwave and Wireless Technologies, 12 (7): 578-587 (2020)Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-BridgesS. Mönch, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 335-338. Piscataway, IEEE, (2021)