%0 Conference Paper %1 basler2021ganbased %A Basler, Michael %A Reiner, Richard %A Mönch, Stefan %A Waltereit, Patrick %A Quay, Rüdiger %A Kallfass, Ingmar %A Ambacher, Oliver %B 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) %C Piscataway %D 2021 %E Saito, Wataru %I IEEE %K %P 59-62 %R 10.23919/ISPSD50666.2021.9452218 %T A GaN-Based Active Diode Circuit for Low-Loss Rectification

@inproceedings{basler2021ganbased, added-at = {2023-08-31T16:44:09.000+0200}, address = {Piscataway}, affiliation = {Basler, M (Corresponding Author), Fraunhofer Inst Appl Solid State Phys, Fraunhofer IAF, Freiburg, Germany. Kallfass, I (Corresponding Author), Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany. Basler, Michael; Reiner, Richard; Moench, Stefan; Waltereit, Patrick; Quay, Rudiger; Ambacher, Oliver, Fraunhofer Inst Appl Solid State Phys, Fraunhofer IAF, Freiburg, Germany. Kallfass, Ingmar, Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany.}, author = {Basler, Michael and Reiner, Richard and Mönch, Stefan and Waltereit, Patrick and Quay, Rüdiger and Kallfass, Ingmar and Ambacher, Oliver}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2252eb6f8e19af2fc32273e68a883c7ff/puma-wartung}, booktitle = {2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)}, doi = {10.23919/ISPSD50666.2021.9452218}, editor = {Saito, Wataru}, eventdate = {2021-05-30/2021-06-03}, eventtitle = {2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)}, interhash = {c7dea861f0728133092c119ab2a1dad4}, intrahash = {252eb6f8e19af2fc32273e68a883c7ff}, keywords = {}, language = {eng}, pages = {59-62}, publisher = {IEEE}, research-areas = {Computer Science; Engineering}, timestamp = {2023-08-31T14:44:09.000+0200}, title = {A GaN-Based Active Diode Circuit for Low-Loss Rectification}, unique-id = {WOS:000684581000014}, venue = {Online}, year = 2021 }