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A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs

M. Weiser, J. Hückelheim, and I. Kallfass. IEEE Transactions on Electron Devices, 68 (9): 4302-4309 (September 2021)
DOI: 10.1109/TED.2021.3098498

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Univ. -Prof. Dr. -Ing. Ingmar Kallfass University of Stuttgart

Ingmar Stoehr

Ingmar Stöhr

Univ. -Prof. Dr. Remco Ingmar Leine University of Stuttgart

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Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications.M. Schlechtweg, A. Tessmann, A. Hülsmann, I. Kallfass, A. Leuther, R. Aidam, C. Zech, U. Lewark, H. Massler, M. Riessle and 3 other author(s). Future Security, volume 318 of Communications in Computer and Information Science, page 200-211. Springer, (2012)Performance comparison of raised cosine shaped and rectangular pulsed signals in E-band wireless communication systems.F. Boes, J. Antes, D. Meier, T. Messinger, D. Muller, R. Henneberger, A. Tessmann, and I. Kallfass. RWS, page 186-189. IEEE, (2015)Multi-gigabit data transmission using MMIC-based E-band frontends.J. Antes, F. Boes, D. Meier, U. Lewark, A. Tessmann, A. Leuther, R. Henneberger, and I. Kallfass. RWS, page 10-12. IEEE, (2014)A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT TechnologyJ. Woermann, A. Dyskin, S. Chartier, and I. Kallfass. 2021 16th European Microwave Integrated Circuits Conference (EuMIC), IEEE, (April 2022)A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTsM. Weiser, J. Hückelheim, and I. Kallfass. IEEE Transactions on Electron Devices, 68 (9): 4302-4309 (September 2021)Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFETL. Yan, and I. Kallfass. 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), page 1885-1890. Piscataway, NJ, IEEE, (2018)Feasibility study of the feed-forward carrier recovery technique for E-band integrated receiversA. Dyskin, and I. Kallfass. IET Circuits, Devices and Systems, 13 (8): 1160-1168 (2019)Characterization and Modeling of the Impact of the Substrate Potential in the Dynamic and Static Behavior of Power GaN-on-Si HEMTsC. Salcines, S. Khandelwal, and I. Kallfass. 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL), Piscataway, NJ, IEEE, (2018)Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power CyclingK. Muñoz Barón, K. Sharma, M. Nitzsche, and I. Kallfass. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page 316-321. Piscataway, IEEE, (2021)Miniaturization and Thermal Design of a170 W AC/DC Battery Charger UtilizingGaN Power DevicesJ. Weimer, D. Koch, M. Nitzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass. IEEE open journal of power electronics, (2021)