%0 Journal Article %1 Weiser_TED2021 %A Weiser, Mathias C. J. %A Hückelheim, Jan %A Kallfass, Ingmar %D 2021 %J IEEE Transactions on Electron Devices %K imported %N 9 %P 4302-4309 %R 10.1109/TED.2021.3098498 %T A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs %V 68 %X A compact model approach to enhance the accuracy and facilitate the parameter extraction of trapping models is presented. The proposed model replaces the conventional superposition of discrete trapping time constants by a Gaussian distribution of a particular range of time constants. This approach reflects the physically non-constant energy levels of the trap distribution of surface, interface, and bulk traps. Also, we propose a new equivalent circuit that takes the time-dependent charging and discharging of traps into account. We show that our model reduces the model complexity by 52%. The model is verified against dynamic ON-state resistance ( R_DS,ON) measurements of a commercial 100-V gallium-nitride (GaN) power transistor in soft-switching operation.

@article{Weiser_TED2021, abstract = {A compact model approach to enhance the accuracy and facilitate the parameter extraction of trapping models is presented. The proposed model replaces the conventional superposition of discrete trapping time constants by a Gaussian distribution of a particular range of time constants. This approach reflects the physically non-constant energy levels of the trap distribution of surface, interface, and bulk traps. Also, we propose a new equivalent circuit that takes the time-dependent charging and discharging of traps into account. We show that our model reduces the model complexity by 52%. The model is verified against dynamic ON-state resistance ( R_DS,ON) measurements of a commercial 100-V gallium-nitride (GaN) power transistor in soft-switching operation.}, added-at = {2022-11-04T11:48:46.000+0100}, author = {Weiser, Mathias C. J. and H{\"u}ckelheim, Jan and Kallfass, Ingmar}, bdsk-url-1 = {https://doi.org/10.1109/TED.2021.3098498}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/272acda4ea5f4a7f51e50362178ff95e3/ingmarkallfass}, date-added = {2022-04-26 06:06:05 +0200}, date-modified = {2022-04-26 06:06:45 +0200}, doi = {10.1109/TED.2021.3098498}, interhash = {28c5818547b3b9494b2c878e0b7528f9}, intrahash = {72acda4ea5f4a7f51e50362178ff95e3}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {imported}, month = {Sep.}, number = 9, pages = {4302-4309}, timestamp = {2022-11-04T10:48:46.000+0100}, title = {A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs}, volume = 68, year = 2021 }