Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges

S. Mönch, B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2018 IEEE 6th Workshop On Wide Bandgap Power Devices and Applications (WiPDA), page 242-246. IEEE, (2018)
DOI: 10.1109/WiPDA.2018.8569066

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

apl. Prof. Dr. Reiner Vogg University of Stuttgart

Reiner Dietz University of Stuttgart

Richard Völker University of Stuttgart

Lukas Reiner University of Stuttgart

Dr. Reiner Rössle University of Stuttgart

Other publications of authors with the same name

Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technologyR. Reiner, P. Waltereit, B. Weiss, S. Moench, M. Wespel, S. Mueller, R. Quay, and O. Ambacher. Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016), 11, 4, page 681-688. London, IET, (2018)Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-BridgesS. Mönch, B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2018 IEEE 6th Workshop On Wide Bandgap Power Devices and Applications (WiPDA), page 242-246. IEEE, (2018)A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current ShuntsM. Basler, S. Mönch, R. Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 274-277. Piscataway, IEEE, (2020)Design and W-CDMA Characterization of a Wideband AlGaN/GaN HEMT Power Amplifier for Future 3G/4G Multiband Base Station ApplicationsD. Wiegner, U. Seyfried, W. Templ, T. Naß, S. Weber, S. Wörner, I. Dettmann, R. Quay, F. van Raay, H. Walcher and 5 other author(s). German Microwave Conference (GeMIC), page 7a-3. Karlsruhe, Germany, (2006)PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link CapacitorsS. Mönch, R. Reiner, P. Waltereit, F. Benkhelifa, J. Hückelheim, D. Meder, M. Zink, T. Kaden, S. Noll, S. Mansfeld and 3 other author(s). IEEE Transactions on Power Electronics, 36 (1): 83-86 (2021)Arguments against the possibility of perfect rationality.R. Reiner. Minds and Machines, 5 (3): 373-389 (1995)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.M. Wespel, M. Baeumler, V. Polyakov, M. Dammann, R. Reiner, P. Waltereit, R. Quay, M. Mikulla, and O. Ambacher. Microelectronics Reliability, 54 (12): 2656-2661 (2014)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.M. Wespel, M. Dammann, V. Polyakov, R. Reiner, P. Waltereit, B. Weiss, R. Quay, M. Mikulla, and O. Ambacher. IRPS, page 2. IEEE, (2015)Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-BridgesS. Mönch, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 335-338. Piscataway, IEEE, (2021)Explanatory warrant for scientific realism.R. Pierson, and R. Reiner. Synthese, 161 (2): 271-282 (2008)