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Disambiguierung von "Ambacher, O."

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W-Band Active Loads and Switching Front End MMICs for Radiometer Calibration

, , , und . Int. Journal of Microwave and Wireless Technologies, (2013)

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Um zwischen Personen mit demselben Namen zu unterscheiden, wird der akademische Grad und der Titel einer wichtigen Publikation angezeigt. Zudem lassen sich über den Button neben dem Namen einige der Person bereits zugeordnete Publikationen anzeigen.

Maximilian Overbeck

European debates during the Libya crisis of 2011: shared identity, divergent action. European Security, 23 (4): 583-600 (2014)

Alexandra Christina Oßwald University of Stuttgart

No One

Marius Oei University of Stuttgart

apl. Prof. Dr. Josko Ozbolt University of Stuttgart

 

Weitere Publikationen von Autoren mit dem selben Namen

Advanced mHEMT MMICs for 220 GHz High-Resolution Imaging Systems, , , , , , , , und . physica status solidi C6, (2009)Design and model studies for solid-state power amplification at 210 GHz, , , , , , , , und . Int. Journal of Microwave and Wireless Technologies, 3 (Special Issue 03): 339--346 (2011)A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts, , , , , , und . in. Proc. 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2020)A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses, , , , , , und . in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2019)Quasi-normally-off GaN Gate Driver for High Slew-Rate D-Mode GaN-on-Si HEMTs, , , , , , , , und . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, (Mai 2015)Wireless Sub-THz Communication System with High Data Rate Enabled by RF Photonics and Active MMIC Technology, , , , , , , , , und 6 andere Autor(en). in Proc. IEEE Photonics Conference, La Jolla, (2014)Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations, , , , und . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs, , , , , , , , und . in Proc. PCIM Europe Conference, (2021)Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements, , , , , , , , und . in Proc. 5th European Microwave Integrated Circuit Conf., Paris, (2010)Metamorphic HEMT Technology for Low-noise Applications, , , , , , , , , und 1 andere Autor(en). in Proc. 20th Int. Conf. on Indium Phosphide and Related Materials, (2009)